| Semester | Course Unit Code | Course Unit Title | T+P+L | Credit | Number of ECTS Credits | Last Updated Date |
| 1 | ECE686 | SEMICONDUCTOR PROCESS AND DEVICE FABRICATION | 3+0+0 | 3 | 7,5 | 14.05.2025 |
|
Language of Instruction
|
English
|
|
Level of Course Unit
|
Doctorate's Degree
|
|
Department / Program
|
ELECTRICAL AND COMPUTER ENGINEERING
|
|
Type of Program
|
Formal Education
|
|
Type of Course Unit
|
Elective
|
|
Course Delivery Method
|
Face To Face
|
|
Objectives of the Course
|
1. To learn basic principles of various semiconductor processes.
2. To obtain technical details of device fabrication processes.
3. To gain knowledge in relevant cutting-edge technologies.
|
|
Course Content
|
Semiconductor basics
CMOS process flow
Crystal
Lithography
Oxidation
Dopant introduction
Thin film deposition
Etching
MEMS fabrication
Cutting-edge fabrication technologies LO3, LO4
|
|
Course Methods and Techniques
|
|
|
Prerequisites and co-requisities
|
None
|
|
Course Coordinator
|
None
|
|
Name of Lecturers
|
Asist Prof.Dr. DOOYOUNG HAH dooyoung.hah@agu.edu.tr
|
|
Assistants
|
None
|
|
Work Placement(s)
|
No
|
Recommended or Required Reading
|
Planned Learning Activities and Teaching Methods
Activities are given in detail in the section of "Assessment Methods and Criteria" and "Workload Calculation"
Assessment Methods and Criteria
|
In-Term Studies
|
|
Yarıl yılSonu Sınavı/Dönem Projesinin Başarı Notuna Katkısı
|
1
|
%
25
|
|
Ödev
|
5
|
%
20
|
|
Proje/Çizim
|
1
|
%
20
|
|
Sunum/Seminer
|
2
|
%
10
|
|
Final examination
|
1
|
%
25
|
|
Total
|
10
|
%
100
|
ECTS Allocated Based on Student Workload
|
Activities
|
Total Work Load
|
|
Araştırma Ödevi
|
5
|
5
|
25
|
|
Yazılı Sınav
|
1
|
3
|
3
|
|
Ev Ödevi
|
5
|
4
|
20
|
|
Sınıf İçi Aktivitesi
|
5
|
1
|
5
|
|
Sunum için Hazırlık
|
2
|
10
|
20
|
|
Sunum
|
2
|
1
|
2
|
|
Proje
|
1
|
40
|
40
|
|
Okuma
|
10
|
2
|
20
|
|
Tekrar Anlatım
|
10
|
1
|
10
|
|
Araştırma
|
5
|
3
|
15
|
|
Simülasyon
|
2
|
10
|
20
|
|
Yüz Yüze Ders
|
14
|
3
|
42
|
|
Final Sınavı
|
1
|
3
|
3
|
|
Total Work Load
| |
|
Number of ECTS Credits 7,5
225
|
Course Learning Outcomes: Upon the successful completion of this course, students will be able to:
| No | Learning Outcomes |
|
1
| To describe the principles of semiconductor processes. |
|
2
| To design specific processes based on their mathematical models. |
|
3
| To design fabrication process flows for given devices, materials and constraints. |
|
4
| To explain specific cutting-edge technologies related to the course, with details. |
Weekly Detailed Course Contents
| Week | Topics | Study Materials | Materials |
| 1 |
Introduction
|
|
|
| 2 |
Semiconductors
|
|
|
| 3 |
CMOS process
|
|
|
| 4 |
Crystal
|
|
|
| 5 |
Lithography
|
|
|
| 6 |
Oxidation
|
|
|
| 7 |
Dopant introduction
|
|
|
| 8 |
Midterm exam
|
|
|
| 9 |
Thin film deposition
|
|
|
| 10 |
Etching
|
|
|
| 11 |
MEMS fabrication
|
|
|
| 12 |
Contemporary research
|
|
|
| 13 |
Contemporary research
|
|
|
| 14 |
Project presentation
|
|
|
Contribution of Learning Outcomes to Programme Outcomes
Contribution: 1: Very Slight 2:Slight 3:Moderate 4:Significant 5:Very Significant
https://sis.agu.edu.tr/oibs/bologna/progCourseDetails.aspx?curCourse=77788&lang=en